Screening and collective modes in disordered graphene antidot lattices

Screening and Collective Modes in Disordered Graphene Antidot Lattices

Electronic properties of disordered graphene antidot lattices

Shengjun Yuan,1,* Rafael Roldán,2,† Antti-Pekka Jauho,3 and M. I. Katsnelson1 1Radboud University of Nijmegen, Institute for Molecules and Materials, Heijendaalseweg 135, 6525 AJ Nijmegen, The Netherlands 2Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco E28049 Madrid, Spain 3Center for Nanostructured Graphene (CNG), DTU Nanotech, Department of Microand Nanotechnology, Technical ...

Charge transport gap in graphene antidot lattices

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Bandgap scaling in bilayer graphene antidot lattices.

On the basis of a tight binding model we reveal how the bandgap in bilayer graphene antidot lattices (GALs) follows a different scaling law than in monolayer GALs and we provide an explanation using the Dirac model. We show that previous findings regarding the criteria for the appearance of a bandgap in monolayer GALs are equally applicable to the bilayer case. Furthermore, we briefly investiga...

Electronic properties of graphene antidot lattices

Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three nu...